Spin-polarized tunneling through randomly transparent magnetic junctions: Reentrant magnetoresistance approaching the Jullière limit

Electron conductance in planar magnetic tunnel junctions with long-range barrier disorder is studied within Glauber-eikonal approximation enabling exact disorder ensemble averaging by means of the Holtsmark– Markov method. This allows us to address a hitherto unexplored regime of the tunneling magnetoresistance effect characterized by the crossover from k conserving to random tunneling k is the in-plane wave vector as a function of the defect concentration. We demonstrate that such a crossover results in a reentrant magnetoresistance: It goes through a pronounced minimum before reaching disorderand geometry-independent Jullière’s value at high defect concentrations.